transistor (npn) features z high i cmax . i cmax =0.5a z low v ce(sat) .optimal for low voltage operation. z complements the 2sa1577 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 40 v v ceo collector-emitter voltage 32 v v ebo emitter-base voltage 5 v i c collector current -continuous 500 ma p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a,i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 32 v emitter-base breakdown voltage v (br)ebo i e =100 a,i c =0 5 v collector cut-off current i cbo v cb =20v,i e =0 1 a emitter cut-off current i ebo v eb =4v,i c =0 1 a dc current gain h fe v ce =3v,i c =10ma 82 390 collector-emitter saturation voltage v ce(sat) i c = 5 00ma, i b = 5 0ma 0.4 v transition frequency f t v ce =5v, i c =20ma,f =100mhz 250 mhz collector output capacitance cob v cb =10v,i e =0,f=1mhz 6 pf classification of h fe rank p q r range 82-180 120-270 180-390 marking cp cq cr sot-323 1. base 2. emitter 3. collector 1 2 3 2SC4097 1 www.htsemi.com semiconductor jinyu
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